SEOUL, South Korea / RankWire.AI / – Samsung Electronics revealed its next-generation memory and storage strategy for AI infrastructure during the 2026 OCP Global Summit. The company introduced these plans at the event held in San Jose, California, from October 12 to 15. Samsung detailed three technological pathways including high-performance memory, Compute Express Link-based memory expansion, and advanced solid-state drives. Additionally, the company announced a collaborative CXL demonstration with Advanced Micro Devices. The overarching goal is to address memory bottlenecks that hinder larger AI workloads.
Samsung centered its approach on enhancing speed, expanding memory capacity, and ensuring data persistence. The first pillar emphasizes high-performance memory, with the company showcasing customized high-bandwidth memory and HBM5, its eighth-generation HBM. The second pillar leverages CXL to augment memory capacity beyond what each server typically offers. The third focuses on data storage and management through next-generation enterprise SSDs and storage software solutions. Samsung states that these three components collectively boost overall AI system efficiency.
The company connected this strategy to the increasing demand for memory driven by AI inference and agent workloads. Larger models produce more data during inference, necessitating greater memory capacity. Many current server designs cap the amount of memory available to each processor. Samsung proposes CXL as a solution to surpass these limitations without the need for complete system redesigns. It also highlighted key-value cache optimization, which enables AI models to reuse previously processed data instead of recomputing it.
Samsung and AMD present joint CXL memory expansion demonstration
At the summit, Samsung and AMD jointly displayed a CXL-based memory expansion solution. This technology facilitates processor sharing of memory resources and allows flexible scaling of capacity across AI systems. Samsung confirms that the solution has been tested in real system environments. The two companies signed a memorandum of understanding in March 2026, focusing on next-generation AI memory and computing technologies. Furthermore, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss collaborations in memory and foundry operations.
Samsung also showcased CMM-D, its CXL-based DRAM memory module, configured in a memory pooling setup. This arrangement connects multiple CXL memory units into a shared pool accessible by different systems as needed. Additional exhibits included processing-in-memory technology, which performs certain calculations within memory chips to reduce data transfers. The company displayed 2-nanometer gate-all-around wafers alongside Groq LPU wafers. Nvidia’s Groq 3 LPX system was also among the exhibits.
Partners gain early access to validated memory solutions
Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, discussed the strategy during an executive session. He emphasized that expanding memory capacity and bandwidth is becoming increasingly critical as AI models grow larger and inference workloads intensify. Shim added that Samsung is broadening co-design and technical validation efforts with global partners early in development stages. This approach aims to ensure memory products align with customer system requirements before they reach the market.
Supporting this initiative, Samsung MAX Lab enables clients to test memory and storage solutions under real AI workloads. Customers can validate technologies such as PIM and next-generation SSDs before they are commercialized. The company attended the summit as a Diamond Sponsor of the Open Compute Project event. This appearance follows Samsung’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. Samsung continues to emphasize memory capacity as a central element in optimizing AI infrastructure performance.